New PDF release: Advances in Non-Volatile Memory and Storage Technology

By Yoshio Nishi

ISBN-10: 0857098039

ISBN-13: 9780857098030

New recommendations are wanted for destiny thinning out of nonvolatile reminiscence. Advances in Non-volatile reminiscence and garage Technology offers an summary of constructing applied sciences and explores their strengths and weaknesses.

After an summary of the present marketplace, half one introduces advancements in flash applied sciences, together with advancements in 3D NAND flash applied sciences and flash reminiscence for ultra-high density garage units. half appears on the merits of designing section swap reminiscence and resistive random entry reminiscence applied sciences. It appears particularly on the fabrication, homes, and function of nanowire part switch reminiscence applied sciences. Later chapters additionally think of modeling of either steel oxide and resistive random entry reminiscence switching mechanisms, in addition to conductive bridge random entry reminiscence applied sciences. ultimately, half 3 seems to the way forward for substitute applied sciences. The components coated comprise molecular, polymer, and hybrid natural reminiscence units, and various random entry reminiscence units resembling nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive units.

Advances in Non-volatile reminiscence and garage Technology is a key source for postgraduate scholars and educational researchers in physics, fabrics technology, and electric engineering. it's a worthwhile device for learn and improvement managers considering electronics, semiconductors, nanotechnology, solid-state thoughts, magnetic fabrics, natural fabrics, and conveyable digital devices.

  • Provides an outline of constructing nonvolatile reminiscence and garage applied sciences and explores their strengths and weaknesses
  • Examines advancements to flash expertise, cost trapping, and resistive random entry memory
  • Discusses rising units similar to these in line with polymer and molecular electronics, and nanoelectromechanical random entry reminiscence (RAM)

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Electrically tied to the SL. The vertical WL needs to align with the horizontal WL. It is difficult to shrink the horizontal WL pitch to avoid the misalignment and process steps are complicated. In 2011, Macronix also proposed a vertical gate 3D-NAND cell, which can eliminate the bottom BL and WL formation (Fig. 23 First, several stacks of insulator and undoped poly-Si are deposited. Then, patterning of the stacked insulator and poly-Si layers is carried out simultaneously. Next, the deposition of ONO dielectric and sequentially gate material fill the space between the horizontal stack of insulator and poly-Si.

2005), ‘A novel NAND-type MONOS memory using 63 nm process technology for multi-gigabit Flash EEPROMs’, IEEE IEDM Tech. , 327–30. 23. -H. et al. (2003), ‘Novel FERAM technologies with MTP cell structure and BLT ferroelectric capacitors’, IEEE IEDM Tech. , 835–9, 2003. 24. Ishiwara, H. (2003), ‘Recent progress in FET-type ferroelectric memories’, IEEE IEDM Tech. , 263–7. 25. , Brown, P. et al. 18 um 4 Mb toggling MRAM’, IEEE IEDM Tech. , 995–9. 26. D. et al. (2003), ‘Magnetoresistive random access memory using magnetic tunnel junctions’, Proceedings of the IEEE, 91(5): 703–14.

39 Bird’s- eye view of vertical gate NAND Flash cell array (BL and SL are formed after WL formation). 40 (a) Equivalent circuit of vertical gate cell which corresponds to the cell shown in Fig. 37; and (b, c) 8 select transistors select 1 NAND string to operate. 41 Bird’s- eye view of vertical gate cell array, which is advanced from the cell shown in Fig. 39. NAND string and the number of process steps for the channel implant increases as the number of stacks increases. Another, more complex, method is shown in Fig.

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Advances in Non-Volatile Memory and Storage Technology by Yoshio Nishi

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